Data processor

ABSTRACT

A data processor ( 1 ) has a central processing unit ( 3 ) and a memory controller ( 6 ) capable of controlling a memory ( 8 ) to be connected to an outside. The memory has a buffer capable of temporarily holding data within an address range corresponding to a predetermined bit number on a low order side of an address signal, and a burst operation for inputting/outputting data can be carried out by a data transfer between the buffer and the outside for an access request in which an access address is changed within the address range. When causing the memory to carry out the burst operation to give an access, the memory controller performs an access control for freely executing the burst operation of the memory continuously if it detects an access exceeding the address range. When causing the memory to carry out the burst access, the memory controller performs an access control for freely executing the burst operation of the memory continuously if it detects the access exceeding the address range. Therefore, it is not necessary to restrict the burst access exceeding the address range and to limit a burst frequency. Consequently, it is possible to enhance a data transfer performance through the burst access together with the memory.

FIELD OF THE INVENTION

The present invention relates to a data processor comprising a memorycontroller, and more particularly to a burst access control for a memoryand an effective technique applied to a data processor capable of givinga burst access to a flash memory connected to an outside, for example.

BACKGROUND OF THE INVENTION

In a memory having a static RAM interface capable of reading data storedin an address after a certain access time in response to an input of theaddress, it is possible to employ a burst mode for increasing a speed ofa reading operation. For example, an electrically writable flash memoryhas a burst buffer between a memory array and a data input/outputterminal. In the reading operation, data selected from the memory arrayon a high order side of an address signal are transferred to the burstbuffer and the data thus transferred to the burst buffer are selected ona low order side of the address signal and are output to an outside. Itis possible to carry out the data output from the burst buffer byenabling an output enable signal. When the low order side of the addresssignal is changed within a range of a storage capacity of the burstbuffer is changed in a state in which the output enable signal ismaintained in “enable”, then, data held in the burst buffer are outputto the outside. For example, when the burst buffer has a size of 16bytes, data within an address range corresponding to 4 bits on the loworder side in a byte address can be output from the burst buffer to theoutside by a burst operation.

Patent Document 1 has described a flash memory capable of carrying out aburst read in a clock synchronization against an asynchronous read.

Patent Document 1: JP-A-11-339484 Publication

SUMMARY OF THE INVENTION

The inventor investigated an access control configuration for causing amemory having a static RAM interface to carry out a burst operation.More specifically, in the case in which an access exceeding an addressrange corresponding to a storage capacity of a burst buffer is to becarried out, it is necessary to read data from a memory array pluraltimes. Accordingly, it is necessary to take a start address of the burstoperation into consideration in order to set a frequency of a burst. Forexample, a data bus width is set to be 16 bits and a size of the burstbuffer is set to be 8 words (16 bytes). By fixing high order addressesA4 to Ax (x is an optional integer of 5 or more) and changing 3 bits oflow order addresses A1 to A3, it is possible to select data in the burstbuffer in 1-word (16-bit) unit, thereby carrying out a burst access. Inthe case in which a start address of the burst access is H′00, it ispossible to give a burst access continuously eight times up to data D0to D7 by changing a sequential address in order of H′02, H′04, H′06,H′08, H′0A, H′0C and H′0E. In this case, it is preferable to set thefrequency of the burst to be eight at a maximum for a memory controller.When the start address of the burst operation is H′08 through thesetting, however, data after H′10 provided across a boundary of theburst buffer are not output in an expected timing if the sequentialaddress is changed in order of H′08, H′0A, H′0C, H′0E, H′10, H′12, H′14and H′16. The reason is as follows. When the address is changed fromH′0E to H′10 (a fourth bit of the address is changed), the memoryrecognizes a first access of the burst operation and a data read fromthe memory array to the burst buffer is generated so that the datacannot be output in an expected access time. In order to prevent such adrawback from being caused, it is possible to propose that a burstaccess to be started in a middle address such as the address H′08 isprohibited in software so as to prevent a burst access from being givenacross a boundary of the burst buffer or a value of the frequency of theburst which can be set to the memory controller is limited to be four orless, for example, so as to freely output the expected data in apermitted start address of H′00 and H′08. However, it is impossible toavoid a deterioration in a data transfer performance through a memoryaccess by any method.

It is an object of the invention to provide a data processor capable ofenhancing a data transfer performance through a burst access togetherwith a memory.

The above and other objects and novel features of the invention will beapparent from the description of the specification and the accompanyingdrawings.

The summary of the typical invention disclosed in the application willbe described below.

[1] A data processor has a central processing unit, and a memorycontroller (6) capable of controlling a memory (8) to be connected to anoutside. The memory has a buffer (25) capable of temporarily holdingdata within an address range corresponding to a predetermined bit numberon a low order side of an address signal and is caused to freely carryout a burst operation for inputting/outputting data by a data transferbetween the buffer and the outside for an access request in which anaccess address is changed within the address range. The memorycontroller carries out a predetermined access control capable ofcontinuously performing the burst operation of the memory if an accessexceeding the address range is detected when the memory is caused tocarry out the burst operation, thereby giving the access. When thememory controller gives the burst access to the memory, consequently,the access control capable of continuously carrying out the burstoperation of the memory is performed if the access exceeding the addressrange is detected. Therefore, it is possible to enhance a data transferperformance through a burst access without requiring to restrict a burstaccess exceeding the address range or to limit the frequency of theburst.

In a specific configuration according to the invention, the memorycontroller detects the access exceeding the address range depending onwhether a higher order bit than the predetermined bit number on the loworder side is changed or not.

In another specific configuration according to the invention, whendetecting the access exceeding the address range, the memory controllercarries out a control for extending an output period of the address forthe memory, thereby causing the burst operation of the memory to befreely executed continuously. The control for extending the outputperiod of the address serves to maintain a time required for updatingdata of the buffer when responding to a read request, for example.Consequently, it is possible to wait for an output of expected data.Furthermore, it is also possible to carry out a control for delaying adata output timing from the buffer through an output enable signalsimultaneously with the control for extending the output period of theaddress. The control serves to maintain a time required for transferringthe data of the buffer to a writing system circuit when responding to awrite request. It is possible to wait for a completion of a datatransfer for preventing write data held in the writing system circuitfrom being undesirably overwritten by write data transferred internallyfrom the buffer.

In a further specific configuration according to the invention, the dataprocessor may have a direct memory access controller capable of givingan access to the memory through the memory controller as a bus masterother than the central processing unit.

In a further specific configuration according to the invention, thememory controller has a register (16) to which a value can be set by thecentral processing unit, and the value to be set to the registerspecifies a bus width and a burst frequency of an external bus to whichan external memory is connected every external memory space. It ispossible to obtain a flexibility in a configuration of the burst accessto the memory. In this case, the burst frequency which can be specifiedby the set value of the register is set to be m/n at a maximum when astorage capacity of the buffer is set to be m bytes and the number ofbits of the external bus is set to be n bytes. The memory is at leastone memory selected from a flash memory, an EEPROM, a mask ROM and anSRAM, for example.

[2] A data processor according to another aspect has a memory controllercapable of controlling a memory to be connected to an outside. Thememory has a memory array and a buffer capable of temporarily holdingdata read from the memory array within an address range corresponding toa predetermined bit number on a low order side of an address signal, andit is possible to carry out a burst reading operation for outputting,from the buffer to the outside, data to meet a read access request inwhich an access address is changed within the address range when thedata are held in the buffer. When causing the memory to carry out theburst reading operation, the memory controller performs a control formaintaining a necessary period of time for updating the data of thebuffer by a memory operation responding to a read request exceeding theaddress range and thus executes the burst reading operation of thememory continuously if it detects the read request. When the memorycontroller gives a burst read access to the memory, consequently, theaccess control capable of continuously carrying out the burst readingoperation of the memory is performed if an access exceeding the addressrange is detected. Consequently, it is possible to enhance a datatransfer performance through a burst access without requiring torestrict a burst read access exceeding the address range or to limit thefrequency of the burst.

[3] A data processor according to a further aspect has a memorycontroller capable of controlling a memory to be connected to anoutside. The memory has a memory array and a buffer capable oftemporarily holding data read from the memory array within an addressrange corresponding to a predetermined bit number on a low order side ofan address signal, and information stored in an address specified by anaddress signal can be output to the outside after a predetermined accesstime in response to an input of the address signal. When detecting aread request exceeding the address range of data held in the buffer, thememory controller carries out an access control for maintaining anecessary period of time for updating the data of the buffer by a memoryoperation in response to the read request. When there is provided astatic RAM interface capable of outputting stored information to anoutside after a predetermined access time in response to the input ofthe address signal, a selection in the memory array has no change if theaccess is continuously given within the range of the data held in thebuffer. Therefore, it is possible to read necessary data in a shortaccess cycle. By maintaining a period of time required for internallytransferring the data selected in the memory array into the buffer inresponse to a read request exceeding the address range, subsequently, itis possible to continuously carry out an operation for reading thenecessary data in the short access cycle.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of a data processor,

FIG. 2 is a block diagram showing an example of a flash memory,

FIG. 3 is a timing chart showing a single read,

FIG. 4 is a timing chart showing a burst read,

FIG. 5 is a timing chart showing a burst read through a control forcontinuously carrying out a burst operation,

FIG. 6 is an explanatory diagram illustrating a relationship between abuffer boundary and an address,

FIG. 7 is a timing chart showing a state in which a burst access iscontinuously given eight times without negating OE# in the middlebecause a burst access is not given across an address buffer boundarywhen a start address is H′00 of the buffer boundary,

FIG. 8 is a timing chart showing a burst read in the case in which afrequency of a burst is set to be eight for a 16-byte buffer and a startaddress is set to be an address H′08 in the middle of the bufferboundary, and a control for continuously carrying out a burst operationis not carried out,

FIG. 9 is an address map showing a local address space assigned to aBSC,

FIG. 10 is an explanatory diagram showing a field of a register CSnBCRrelated to a continuous control of the burst operation,

FIG. 11 is an explanatory diagram showing a field of a register CSnWCRrelated to the continuous control of the burst operation,

FIG. 12 is a block diagram showing an example of a burst stop detectingcircuit (BSTED) 18, and

FIG. 13 is an explanatory diagram illustrating a continuous controlconfiguration of the burst operation by a combination of setting of aburst operation start address and a frequency of a burst in a 32-byteburst access.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows an example of a data processor. A data processor 1 isformed on a semiconductor substrate such as a single crystal silicon bya complementary MOS integrated circuit manufacturing technique, which isnot particularly restricted. The data processor 1 includes a centralprocessing unit (CPU) 3 and a direct memory access controller (DMAC) 4to be bus masters, a PCIC (peripheral component interconnect controller)5 to be an interface controller, and a bus state controller (BSC) 6 tobe an external memory controller on an internal bus 2 which is typicallyshown. The CPU 3 has an instruction control portion and an executingportion, and the instruction control portion fetches and decodes aninstruction, controls a calculation carried out by the executing portionin accordance with a result of the decoding, and executes theinstruction. The DMAC 4 carries out a single address transfer and a dualaddress transfer in accordance with a data transfer control conditionset by the CPU 3. A PCI bus is connected to the PCIC 5.

The BSC 6 includes an internal bus interface circuit (IBIF) 10 to beconnected to the internal bus 2 and an external bus interface circuit(EBIF) 11 to be connected to an external bus 7. Data are transferredbetween the IBIF 10 and the EBIF 11 through a data buffer (DBUF) 12. Acontrol of an output timing of a strobe signal to a memory to beconnected to the external bus 7 and an access cycle is carried out bythe external bus control circuit 11 in accordance with an output of anaccess control state machine (ACSM) 13. A state transition control iscarried out through the access control state machine 13 by referring tocontrol information output from a wait control circuit (WSCNT) 14,control information output from a burst control circuit (BSTCNT) 15, andinformation about an address and an access size which are output fromthe IBIF 10. The BSC 6 has a control register (CSnBCR) 16 and a controlregister (CSnWCR) 17 to which a value can be set by the CPU 3. A flashmemory (FLASH) 8 to be the external memory which is typically shown isconnected to the external bus 7.

When an instruction for a read access is given upon receipt of adesignation of an address and an access size from the CPU 3, forexample, the BSC 6 decides an address area specified by an address andcontrols a burst read access for the flash memory 8 at a frequency of aburst corresponding to the access size by setting the specified addressto be a head based on the state transition control of the access controlstate machine 13 in accordance with the setting of the registers 16 and17 corresponding to the address area which is decided. The burst controlcircuit 15 carries out a necessary address increment for a burst accessby setting, as a head, an address supplied from the CPU 3. Furthermore,the burst control circuit (BSTCNT) 15 manages the frequency of the burstwhich is executed and carries out a control for giving an instruction toan external interface circuit 11 if an interruption of the burst accessis required in the middle. The wait control circuit (WSCNT) 14 gives aninstruction for a necessary wait cycle in an access cycle to the accesscontrol state machine (ACSM) 13.

Before an explanation of the details of the BSC 6, first of all,description will be given to the flash memory 8.

FIG. 2 shows an example of the flash memory 8. The flash memory 8 isformed on a semiconductor substrate such as a single crystal silicon.

The flash memory 8 inputs access control signals, for example, a chipenable signal CE#, a write enable signal WE#, an output enable signalOE# and a reset signal RES#, and a source voltage VDD, a ground voltageVSS and a high voltage VPP for a write and erase processing are suppliedas operating voltages to the flash memory 8. Address signals A0 to A21are address input terminals or address signals. D0 to D15 are datainput/output terminals or data. The symbol “#” attached to the accesscontrol signal indicates a low enable signal.

20 denotes a memory array (MARY) which includes a memory mat and a senselatch circuit. The memory mat has a large number of electricallyerasable and writable nonvolatile memory cells and forms an arrayconfiguration of an AND or NOR type in which a data terminal of thenonvolatile memory cell is connected to a bit line in parallel, which isnot particularly restricted.

The nonvolatile memory cell can employ a proper memory cell structuresuch as a stacked gate structure in which a control gate is superposedon a floating gate through an insulating film or a split gate structurein which a selection transistor and a storage transistor having asilicon nitride film are disposed in series, which is not particularlyshown. For example, in case of a nonvolatile memory cell having thestacked gate structure, a control gate, a drain and a source areconnected to a word line, a bit line and a source line, respectively. Anerasure processing for the nonvolatile memory cell having the stackedgate structure is not particularly restricted but is set to be aprocessing of applying a high positive voltage as an erase bias to thecontrol gate and discharging an electron of a floating gate, therebydropping a threshold voltage. A write processing for the nonvolatilememory cell having the stacked gate structure is not particularlyrestricted but is set to be a processing of applying a high negativevoltage as a write bias to the drain and injecting an electron into thefloating gate, thereby raising a threshold voltage. A read processing isset to be a processing capable of selecting a memory cell transistor bysetting a predetermined read deciding level to be a word line selectinglevel and detecting stored information depending on a change in acurrent flowing to the bit line or a change in a level which appears onthe bit line.

The word line and the source line are selected by an output of an Xdecoder (XDEC) 21. A data register (DREG) 22 is connected to the bitline and holds data read from the nonvolatile memory cell onto the bitline depending on the selection of the word line or write data. A Y gate(YGT) 23 is constituted by a switch circuit for selecting aninput/output node of the data register 22 on a 16-byte unit, and theswitch circuit is selected by an output of a Y decoder (YDEC) 24. The16-byte input/output node of the data register 22 selected by the Y gate23 is connected to an input terminal of an output buffer (OBUF) 25, andfurthermore, is connected to an output terminal of an input buffer(IBUF) 26. The output buffer 25 and the input buffer 26 are set to beburst buffers which are used in a burst operation and have storagecapacities of 16 bytes, respectively. A 16-byte storing portion of theoutput buffer 25 is selectable on a 2-byte unit, and two bytes which areselected are connected to 16-bit data input/output terminals D0 to D15through an output terminal. Similarly, a 16-byte storing portion of theinput buffer 26 is also selectable on a 2-byte unit and two bytes whichare selected are connected to the 16-bit data input/output terminals D0to D15 through an input terminal. The selection of the two bytes for the16-byte storing portion is carried out by an output of a buffer decoder(BDEC) 27. Low-order 4-bit address signals A0 to A3 are given to thebuffer decoder 27. High-order address signals A4 to Am are given to theYDEC 24 and higher-order address signals An to A21 are given to the XDEC21.

A control circuit (CONT) 28 carries out a control of an operation of theflash memory 8 and a power circuit 29 outputs an internal voltage suchas a high voltage which is required for write and erase processings. Aninstruction for the operation of the flash memory 8 is given to thecontrol circuit 28 through the access control signal and a command. Thecommand is input from the data input/output terminals D0 to D15 inresponse to a specific state of the access control signal.

The start of an erase processing and a write processing and a verifyprocessing for the nonvolatile memory cell are not particularlyrestricted but are designated through a command. When the chip enablesignal CE# is enabled and the write enable signal WE# is enabled, theyare input to the input buffer 26 in accordance with a change in anaddress signal and are internally transferred from the input buffer 26into the data register 22 through the YGT 23 so that the write data tobe used for the write processing are input. When the write data are tobe input, it is possible to utilize a burst operation which will bedescribed below. In the write processing, the selection andnon-selection of an application of a write voltage is controlled inaccordance with a logical value of the write data held in the dataregister 22. Before the write processing, a nonvolatile memory cellcorresponding to one word line to be a write processing object issubjected to the erase processing in a state in which stored informationis previously saved in the data register 23.

In a reading operation, a flash memory implements a static RAM interfacecapable of reading data stored in an address after a certain access timein response to an input of the address. More specifically, when the chipenable signal CE# is enabled and the output enable signal OE# isenabled, stored data which are selected from a memory array in responseto an address signal, selected by the YGT 23 and selected by the OBUF 25are output to an outside. The operation is a single read. When theaddress signal is changed within a range of the low order addresses ofA0 to A3 corresponding to a storage capacity of the OBUF 25 after thesingle read, the selection in the memory array and the selecting statebrought by the YGT 23 are not changed. If the output enable signal OE#is exactly maintained in the enable level to enable a data outputtingoperation, therefore, it is possible to select the data held in the OBUF25 and to output them from the data terminals D0 to D15 to the outsidein a shorter access cycle than the single read. The operation is a burstread.

FIG. 3 is a timing chart illustrating the single read. When an operationclock cycle of the CPU 3 is indicated as cyc, each memory cycle is setto be three cycles.

FIG. 4 is a timing chart illustrating the burst read. A first access iscarried out in three cycles in the same manner as in the single read,and then, a memory operation is performed in two cycles which arerequired for executing the read operation by a data transfer from theoutput buffer 25 to the external terminals D0 to D15. A and B representa time taken from a change in an address to an output of data.

When causing the flash memory 8 to carry out a burst reading operation,the burst control circuit 15 of the BSC 6 performs a control formaintaining a time required for updating data of the buffer 25 by datatransmitted from the memory array 20 through a memory operationresponding to a read request exceeding the address range of A0 to A4 ifit detects the read request, thereby executing the burst readingoperation of the memory continuously. In a different sense, whendetecting a read request exceeding the address range of the data held inthe buffer 25 (a variable range of A0 to A4), the burst control circuit15 carries out an access control for maintaining a time required forupdating the data of the buffer 25 by the data transmitted from thememory array 20 through the memory operation in response to the readrequest.

FIG. 5 is a timing chart showing a burst read to be carried out by acontrol for continuously performing the burst operation. For the buffer25 having 16 bytes, the frequency of the burst is set to be eight and astart address is set to be an address H′08 in the middle of the bufferboundary. FIG. 6 illustrates a relationship between the buffer boundaryand the address which will be taken into consideration. The address bitA4 is changed in the middle of a burst access (time Ti). In short, anaccess address exceeds the address range (the variable range of A0 toA4) of the data held in the buffer 25. At this time, the BSC 6 negatesthe output enable signal OE# to wait for a timing in which an accesstime of a next access (an access to an address H′10) is the same as afirst burst access, and the output enable signal OE# is asserted again.Consequently, it is possible to output the data to the outside bywaiting for a transfer of data in the access address in which A0 to A4are changed to H′10 from the memory array 20 to the buffer 25. Then, theoutput enable signal OE# is asserted to the end and the burst read isrepeated during that time.

In the case in which the start address is H′00 of the address bufferboundary as shown in FIG. 7, the burst access is not given across theboundary of the buffer 25. Therefore, the burst access is givencontinuously eight times without negating the output enable signal OE#in the middle.

FIG. 8 is a timing chart showing a burst read in the case in which thefrequency of the burst is set to be eight and the start address is setto be the address H′08 in the middle of the buffer boundary for the16-byte buffer 25, and a control for continuously performing the burstoperation is not executed. An access exceeding the buffer boundary isset to be the same access cycle. As a result, data in an access addressin which A0 to A4 are changed to H′10 are decided to be output to theoutside without waiting for a transfer from the memory array 20 to thebuffer 25. In addition, the address is also changed to be a next. As aresult, there is a possibility that at least the read data of H′10, andfurthermore, subsequent data might be changed to have undesirablevalues.

Next, detailed description will be given to the bus state controller(BSC) 6 for supporting the continuous control of the burst operation.

FIG. 9 is an address map showing a local address space assigned to theBSC 6. The continuous control of the burst operation is set to beeffective in an address space excluding areas 3 and 7, that is, anaddress space in which the burst ROM can be selected.

FIG. 10 shows a register field of a CSnBCR 16 related to the continuouscontrol of the burst operation. FIG. 11 shows a register field of aCSnWCR 17 related to the continuous control of the burst operation. Theregisters 16 and 17 are provided for each area of the address space ofFIG. 9.

A 2-bit field of BST1-0 specifies the frequency of the burst, that is,00: four times at a maximum, 01: eight times at a maximum, 10: 16 timesat a maximum (only when a bus width is set to be 8 and 16 bits), and 11:32 times at a maximum (only when a bus width is set to be 8 bits).

A 2-bit field of SZ1-0 specifies the bus width, that is, 00: settingprohibition, 01: 8 bits, 10: 16 bits and 11: 32 bits.

A 3-bit field of BW2-0 specifies a burst pitch (an access time after asecond burst), that is, 000: nothing, 001: one cycle, 010: two cycles,011: three cycles, 100: four cycles, 101: five cycles, 110: six cycles,and 111: seven cycles.

A 3-bit field of TYPE2-0 specifies a memory type to be connected, thatis, 000: SRAM, 001: byte control SRAM, 010: burst ROM, and 100: PCMCIA.The PCMCIA represents a memory card in accordance with the PersonalComputer Memory Card International Association standards.

A 3-bit field of RDS2-0 specifies the number of wait cycles to beinserted from the assertion of the chip enable signal CE# to that of theoutput enable signal OE#, that is, 000: nothing, 001: one cycle, 010:two cycles, 011: three cycles, 100: four cycles, 101: five cycles, 110:six cycles, and 111: seven cycles. The cycle implies an operation clockcycle cyc of a CPU, for example.

A 4-bit field of IW3-0 specifies a wait cycle to be inserted from theassertion of the output enable signal OE# to a read of data, that is,0000: nothing, 0001: one cycle, 0010: two cycles, 0011: three cycles,0100: four cycles, 0101: five cycles, 0110 six cycles, 0111: sevencycles, 1000: eight cycles, 1001: nine cycles, 1010: eleven cycles,1011: thirteen cycles, 1100: fifteen cycles, 1101: seventeen cycles,1110: twenty-one cycles, and 1111: twenty-five cycles.

The continuous control of the burst operation is effective when thememory type is set to the burst ROM. A first access time of the burstaccess is specified by setting the field IW3-0 of the CSnWCR.

FIG. 12 shows a detailed example of the BSC 6. The BSC 6 has a burststop detecting circuit (BEDTC) 18 and a burst address generating circuit(BAGEN) 19. The generation of an address for a burst access is carriedout by a burst address generating circuit (BAGEN) 19. The BAGEN 19 hasan address control logic (BALOG) 33 and an address counter (ACOUNT) 34.An access detection is carried out across the boundary of the outputbuffer 25 to be the burst buffer by the burst stop detecting circuit(BEDTC) 18. The BEDTC 18 has a burst stop deciding circuit (BEDCS) 35and a burst frequency counter (BCOUNT) 36.

The address control logic 33 inputs information about a burst frequency(BSAT) set to a field BST1-0 of the register (CSnBCR) 16 for each area,a bus width (SZ) set to a field SZ1-0, a memory type (TYPE) set to afield TYPE2-0, an address (ADR) of an access destination and an accesssize (ASZ), and causes the address counter 34 to generate a burstaddress BADR with the address (ADR) set to be a head. An addressincrement and a frequency of the address counter 34 are determineddepending on the bus width and the access size (ASZ). The BALOG 33outputs, to the external interface circuit 11, a signal 31 indicatingthat the burst is being carried out.

The burst stop deciding circuit 35 inputs the information about theburst frequency (BSAT) set to the field BST1-0 of the register (CSnBCR)16 for each area, the bus width (SZ) set to the field SZ1-0, the memorytype (TYPE) set to the field TYPE2-0, the address (ADR) of the accessdestination and the access size (ASZ), and furthermore, inputs a countvalue of the burst frequency counter 36, and gives a burst stopindicating signal 30 indicative of a stop of a burst access to theaccess control state machine 13 when detecting a read request exceedingthe address range (the variable range of A0 to A4) of the data held inthe buffer 25 based thereon. The state machine 13 designated to stop theburst gives the external interface circuit 11 an instruction for settingan access time of a next access to be equal to that of a single access.Consequently, the external interface circuit 11 negates the outputenable signal OE# as is illustrated in the time T1 in FIG. 5. The burstcontrol circuit 15 outputs, to the external interface circuit 11, thesignal 31 indicating that the burst is being carried out, and theexternal interface circuit 11 continuously asserts the output enablesignal OE# if the burst is being carried out. When the burst stop isdetected in response to the burst stop indicating signal 30, the outputenable signal OE# is negated. The burst frequency counter 36 carries outan increment operation of +1 in response to an increment indicatingsignal INC of the address counter 34, thereby counting a total burstfrequency. The burst stop deciding circuit 35 decides a burst stop untilthe count value of the burst frequency counter 36 reaches a burstfrequency specified by the register, and the total burst frequencydetermined by an access size and a bus width.

A burst pitch (BW) set to the field BW2-0 of the register (CSnBCR) 16and a wait number (RDS, IW) set to the fields RDS2-0 and IW3-0 of theregister (CSnWCR) 17 are supplied to the wait control circuit 14 shownin FIG. 1, and an instruction for an insertion of a wait cycle specifiedby them is given to the access control state machine 13. The accesscontrol state machine 13 to which the instruction for the insertion ofthe wait cycle is given causes the external interface circuit 11 tocontrol an assert timing of OE# after the CE# assertion, a read timingof read data after the CE# assertion, and a read timing of the read dataduring the burst operation in accordance with the number of wait cycleswhich is specified. When the burst stop is detected in response to theburst stop indicating signal 30 so that the output enable signal OE# isnegated (the time T1 in FIG. 5), the access control state machine 13causes the external interface circuit 11 to control a timing forasserting the output enable signal OE# in accordance with the number ofwait cycles specified by the field RDS2-0.

For a control other than the continuous control of the burst operation,other set values of the registers 16 and 17 are supplied to the ACSM 13,which is not particularly shown.

FIG. 13 illustrates a continuous control configuration of the burstoperation by a combination of setting of a burst access start addressand a burst frequency in a 32-byte burst access. FIG. 13 shows the casein which the burst access has an access size of 32 bytes, and a buswidth and a burst frequency are set to be matched with the access sizeof 32 bytes. The burst access start address is caused to be selectablein a manner shown in FIG. 13, and a right column sequentially shows alow order address across the buffer boundary until the access size of 32bytes is reached. In brief, it is to be understood that FIG. 13 showscontrol specifications of the 32-byte burst access through the BSC 6 forvarious external memories having different bus widths and burst buffersizes. In FIG. 13, particularly, the continuous control of the burstaccess is carried out for an access to be started in an addressdescribed in a thick frame region.

For example, in case of the flash memory 8 of FIG. 2, a burst access ispermitted in a bus width of 16 bits and a burst frequency of 4 or 8. Thereason is that the burst buffer 25 provided in the flash memory 8 ofFIG. 2 has a storage capacity of 16 bytes. In the case in which the dataprocessor 1 carries out a burst access for the flash memory 8 in a buswidth of 16 bits and a burst frequency of 8, the burst access isperformed in total of 16 times having 8 times from H′00 if the burstaccess start address is H′00 and 8 times from an address of H′10. On theother hand, when the start address is H′08, the continuous control ofthe burst operation is carried out and the access cycle is extended inthe same manner as the single read in the address of the buffer boundaryof H′10 and H′00. Consequently, a burst access in total of 32 bytes isperformed. In short, the burst access is carried out in total of 32times including 8 times from H′08, 16 times from H′10 and 8 times fromH′00. Also in the case in which the burst access is thus carried out, itis preferable to give an instruction of 32 bytes in an access size at aburst frequency of eight. It is not necessary to give an instruction fora burst access in a division into three times, that is, an access sizeof 8 bytes at a burst frequency of four, an access size of 16 bytes at aburst frequency of eight and an access size of 8 bytes at a burstfrequency of four. The data processor has a specification for selectingthe burst buffer 25 in wraparound within a range of 32 bytes when thestart address is not placed on the boundary of the burst buffer 25,which is not particularly restricted. For this reason, the burst addresspasses through H′10 and H′00 in the middle and finally reaches H′07 whenthe start address is H′08 in the burst access.

As described above, the BSC 6 temporarily stops the burst operation ofthe flash memory 8, waits for a completion of the data read from thememory array 20 to the burst buffer 25 in the flash memory 8 andcontinuously carries out the burst operation of the flash memory 8 againin the case in which the burst access to the flash memory 8 is givenacross the boundary of the burst buffer 25 in the f lash memory 8 duringthe execution of the burst access. When temporarily stopping the burstoperation of the flash memory 8, the BSC 6 negates the output enablesignal OE# and causes a period for outputting an address to be equal toa first memory access of the burst access, thereby waiting for data tobe read onto the burst buffer 25. Consequently, it is possible toenhance a throughput of the access to the flash memory 8, andfurthermore, to operate external memories of more types by means of adata processor. It is not necessary to prohibit, in software, a burstaccess to be started in the middle of the burst buffer in order toprevent the burst access from being given across the boundary of theburst buffer and to limit the frequency of the burst in order to preventthe burst access from being given across the boundary of the buffer inthe middle.

When inputting write data, the flash memory may be burst operable. Morespecifically, when fetching the write data from the input buffer 26 tothe data register 22 through the YGT 23, the data processor 1 may writethe write data to the input buffer 26 through a burst write access. Atthis time, it is necessary to internally transfer the write data fromthe input buffer 26 to the data register 22 before a higher order thanthe write address A4 is changed. When the bit A4 of the write address ischanged during the burst access, a countermeasure is previously taken byextending an access address output period corresponding to a necessaryperiod of time for internally transferring the write data held in theinput buffer 26 to the data register 22.

While the invention made by the inventor has been specifically describedabove based on the embodiment, the invention is not restricted theretobut it is apparent that various changes can be made without departingfrom the scope thereof.

For example, the external memory is not restricted to the flash memorybut a mask ROM, an EEPROM and an SRAM may be used. The burst buffer sizeis not restricted to 4, 8, 16 and bytes but it is a matter of coursethat the other sizes may be used. The data processor may comprise a busmaster other than a CPU and a DMAC or other bus slave circuits. It isalso possible to employ a cache memory or an address converting bufferfor virtual storage.

The invention can be widely applied to data processors including amemory controller and serving to carry out a data processing, forexample, a microprocessor, a microcomputer and a system on-chip LSI.

1. A data processor comprising: a central processing unit; and a memorycontroller capable of controlling a memory to be connected to anoutside, wherein the memory has a buffer capable of temporarily holdingdata within an address range corresponding to a predetermined bit numberon a low order side of an address signal and is caused to freely carryout a burst operation for inputting/outputting data by a data transferbetween the buffer and the outside for an access request in which anaccess address is changed within the address range, the memorycontroller causing the memory to carry out the burst operation to givean access, performs an access control for once negating an output enablesignal and asserting the output enable signal again to execute the burstoperation of the memory continuously if it detects an access exceedingthe address range from a change in a higher order bit than thepredetermined bit number on the low order side, the memory controllerincludes a register having a field for specifying a burst frequency, afield for specifying a bus width, a field for specifying an access timeafter a second burst, a field for specifying a memory type, a field forspecifying the number of wait cycles to be inserted from an assertion ofa chip enable signal to that of the output enable signal, and a fieldfor specifying the number of wait cycles to be inserted from theassertion of the output enable signal to a read of data, and the memorycontroller can continuously carry out the burst operation of the memoryin accordance with a value set to the field by the central processingunit in the access control.
 2. (canceled)
 3. (canceled)
 4. (canceled) 5.(canceled)
 6. The data processor according to claim 1, furthercomprising a direct memory access controller capable of giving an accessto the memory through the memory controller.
 7. (canceled)
 8. The dataprocessor according to claim 1, wherein the burst frequency which can bespecified by the set value of the register is set to be m/n at a maximumwhen a storage capacity of the buffer is set to be m bytes and thenumber of bits of the bus is set to be n bytes.
 9. The data processoraccording to claim 8, wherein the memory is at least one memory selectedfrom a flash memory, an EEPROM, a mask ROM and an SRAM.
 10. (canceled)11. (canceled)